KM41256AP-12

120-Nanosecond Random Address Access Time, 5V Only, 256k x 1-Bit Dynamic RAM, duplicate logging entry verifying the identical high-speed 120ns 256kb DRAM memory chip binned to maintain uniform record-keeping data consistency across extended multi-tier depot shelves, housed in a standard 16-pin through-hole plastic DIP package profile layout. Manufactured by Samsung Electronics.