KM41256AP-12

120-Nanosecond Random Address Access Time, 5V Only, 256k x 1-Bit Dynamic RAM, representing an enhanced-speed performance grade step within the identical architectural memory family. It significantly reduces memory wait states and timing bottlenecks inside high-frequency microprocessor networks, delivering rock-solid register continuity under persistent manual bench calibration stress, housed in a standard 16-pin through-hole plastic DIP package configuration. Manufactured by Samsung Electronics.