JAN1N547

Silicon Medium-Power General-Purpose Power Rectifier Diode, featuring a robust 600V peak reverse voltage capacity (\(V_{RRM}\)) paired with a continuous average forward rectified current threshold of 400mA [JAN1N540]. It handles stable high-voltage power rectification and reverse-surge voltage shielding trunks under elevated thermal operational thresholds, preventing contact degradation or localized line sags across heavy military distribution matrices [JAN1N540], housed in a hermetically sealed, heavy-duty axial-leaded DO-13 metal header or glass encapsulation package layout [JAN1N540]. Manufactured by Raytheon / International Rectifier / Motorola. Exact Industry Equals: JAN1N547.