{"product_id":"156590","title":"MTW20N50E","description":"\u003cp\u003eHigh-voltage, high-speed N-Channel power MOSFET originally developed by Motorola Semiconductor (now under ON Semiconductor \/ onsemi). It uses an advanced TMOS E-FET design optimized for high energy efficiency and is fully avalanche-rated to withstand stressful voltage spikes and transients.Key SpecificationsThe component is engineered for robust thermal dissipation and efficient load handling:Drain-Source Voltage (\\(V_{DSS}\\)): 500 VContinuous Drain Current (\\(I_{D}\\)): 20 AMaximum Power Dissipation (\\(P_{D}\\)): 250 WStatic Drain-Source On-Resistance (\\(R_{DS(on)}\\)): 0.24 Ω to 0.27 Ω (240–270 mΩ)Gate Threshold Voltage (\\(V_{GS(th)}\\)): 2.0 V to 4.0 VPackage Type: TO-247 (Through-Hole, standard three-pin configuration)Common ApplicationsDue to its rapid switching capabilities and integrated fast-recovery source-to-drain diode, this transistor is typically used in:Switch-Mode Power Supplies (SMPS)DC-DC ConvertersPulse-Width Modulation (PWM) motor controlsBridge Circuits where safe operating areas and diode recovery speeds are critical 20N50 20N50E\u003c\/p\u003e","brand":"ON SEMICONDUCTOR","offers":[{"title":"Default Title","offer_id":67588501340213,"sku":null,"price":24.15,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0219\/7936\/5440\/files\/AP1GczMHLVWRQ8TXcbG8kRmbD_uMtX0Ut7lFbYrhBJiddOOZFhk2zA8gQ7WBPcdN_t5sbIe1RMfsOMVVcZMmu3872koyOweRWi9ELj2_uIzR_mA259glHZTp_JWPabrLiKf1BfaEiF87ffDg7Djs1s0DFvcxKQ_w1851-h1851-s-no-gm.jpg?v=1790724608","url":"https:\/\/greenbrookonline.com\/products\/156590","provider":"Green Brook Online","version":"1.0","type":"link"}