MTW20N50E

High-voltage, high-speed N-Channel power MOSFET originally developed by Motorola Semiconductor (now under ON Semiconductor / onsemi). It uses an advanced TMOS E-FET design optimized for high energy efficiency and is fully avalanche-rated to withstand stressful voltage spikes and transients.Key SpecificationsThe component is engineered for robust thermal dissipation and efficient load handling:Drain-Source Voltage (\(V_{DSS}\)): 500 VContinuous Drain Current (\(I_{D}\)): 20 AMaximum Power Dissipation (\(P_{D}\)): 250 WStatic Drain-Source On-Resistance (\(R_{DS(on)}\)): 0.24 Ω to 0.27 Ω (240–270 mΩ)Gate Threshold Voltage (\(V_{GS(th)}\)): 2.0 V to 4.0 VPackage Type: TO-247 (Through-Hole, standard three-pin configuration)Common ApplicationsDue to its rapid switching capabilities and integrated fast-recovery source-to-drain diode, this transistor is typically used in:Switch-Mode Power Supplies (SMPS)DC-DC ConvertersPulse-Width Modulation (PWM) motor controlsBridge Circuits where safe operating areas and diode recovery speeds are critical 20N50 20N50E