2N5108

NPN bipolar junction transistor (BJT) explicitly designed for high-frequency RF (radio frequency) and Class C amplifier applications operating up to 1 GHz. It features a high current-gain bandwidth product (\(f_{T}\)) and is housed in a rugged, hermetically sealed TO-39 metal can package - The primary operational limits and electrical characteristics of the 2N5108 include:ParameterSymbolMaximum Rating / ValueCollector-Base Voltage\(V_{CBO}\)55 VCollector-Emitter Voltage\(V_{CEO}\)30 V to 35 V (depending on mfr.)Emitter-Base Voltage\(V_{EBO}\)3.0 V to 4.0 VContinuous Collector Current\(I_{C}\)400 mA (0.4 A)Total Power Dissipation (\(T_C = 25^\circ\text{C}\))\(P_{D}\)3.5 WCurrent-Gain Bandwidth (\(f_{T}\))\(f_{T}\)1,200 MHz (Min) to 1,500 MHz (Typ)Power Gain (@ 1.0 GHz)\(G_{PE}\)6.0 dB (Typical)Pin Configuration (TO-39 Metal Can)Looking at the bottom of the TO-39 package with the alignment tab facing down/left:Pin 1: EmitterPin 2: BasePin 3: Collector (typically connected directly to the metal case for heat dissipation)Primary ApplicationsRF Power Amplifiers: Primarily utilized in the output or driver stages of high-frequency transmitters.Class C Amplifiers: Optimized to deliver high efficiency in narrow-band RF circuits up to 1 GHz.Frequency Multipliers & Oscillators: Used in communications gear requiring clean high-frequency generation.