MPSA20

NPN silicon bipolar junction transistor (BJT) designed primarily for small-signal general-purpose amplification and low-power switching applications. It is housed in a standard through-hole TO-92 plastic package - Collector-Emitter Voltage (\(V_{CEO}\)): 40 Vdc maximumCollector-Base Voltage (\(V_{CBO}\)): 40 Vdc maximum (Note: Some earlier legacy sheets specify lower values, but standard components rate it at 40V)Emitter-Base Voltage (\(V_{EBO}\)): 4.0 Vdc maximumContinuous Collector Current (\(I_{C}\)): 100 mAdc maximumTotal Device Dissipation (\(P_{D}\)): 625 mW at ambient temperature (\(T_A = 25^\circ\text{C}\))DC Current Gain (\(h_{FE}\)): 40 minimum to 400 maximum (measured at \(V_{CE} = 10\text{V}, I_C = 5\text{mA}\))Current Gain-Bandwidth Product (\(f_{T}\)): 125 MHz minimum