FPT110
SILICON PHOTOTRANSISTOR vintage, high-illumination sensitivity NPN silicon planar phototransistor. It features a three-terminal configuration (Collector, Emitter, and Base) housed in a TO-106-3 (OPTO-28) transparent resin plastic package. The inclusion of a dedicated base pin gives circuit designers extra flexibility to bias the device and customize its optical switching characteristics - Collector-to-Base Voltage (\(V_{CB}\)): 50 VCollector-to-Emitter Sustaining Voltage (\(V_{CES}\)): 30 VContinuous Collector Current (\(I_{C}\)): 25 mATotal Power Dissipation (\(T_A = 25^\circ\text{C}\)): 100 mWOperating Temperature Range: \(-55^{\circ }\text{C}\) to \(+85^{\circ }\text{C}\)
MUDD11BJ