NTE314
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NTE314, NPN Silicon High-Frequency Transistor, 30V, 0.05A, Package: TO-92, Description: Low-noise, low-capacitance NPN silicon device designed for high-gain RF pre-amplifier stages and high-frequency local oscillator circuits. Equivalent: Toshiba 2SC945 / NEC 2SC1815 / Panasonic 2SC828 / Central Semiconductor 2N3904. Examples of Use: AM/FM radio receiver front-end RF tuners, intermediate-frequency (IF) staging filters, shortwave converter local oscillators, wireless telemetry antennas, consumer electronics signal mixing nodes, low-power RF transmitters.
NTECROSS4MC