2SC367

Silicon NPN General-Purpose High-Frequency RF Transistor, optimized for localized oscillators, mixers, and intermediate frequency (IF) amplifier stages in legacy radio and television tuner sections. It manages a 40V maximum collector-base voltage threshold alongside a 400mA continuous current rating and a 100MHz gain-bandwidth product, housed in a standard through-hole TO-92 plastic encapsulated package. Manufactured by Toshiba.