SGSP319
Power Field-Effect Transistor, 2.8A I(D), 500V, 3.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
SLOWCHEETAH33BJ
Power Field-Effect Transistor, 2.8A I(D), 500V, 3.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB