MRF313

1WATT RF Transistor - The RF Line NPN Silicon High-Frequency Transistor
1.0W, 400MHz, 28V MICROWAVE TRANSISTOR - RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN - 5pf - CASE 305A-01, 4 PIN - Designed for wideband amplifier, driver or oscillator Product Image
applications in military, mobile, and aircraft radio.
 Specified 28 V, 400 MHz characteristics —
Output power = 1.0 W
Power gain = 15 dB min.
Efficiency = 45% typ.
 Emitter ballast and low current density for improved MTBF
 Common emitter for improved stability