MSC2304-12YS8

CMOS dynamic random-access memory (DRAM) single in-line memory module (SIMM) optimized for low power, tracking a 256K x 32-bit architecture to deliver 1 Megabyte of memory at a 120-nanosecond timing curve. Equivalents: Standard 72-pin non-parity low-density SIMM arrays. Real-Life Examples: Early industrial embedded systems, early automated teller machine hardware cores, legacy point-of-sale server blocks.