2N4354

Silicon PNP bipolar junction transistor designed for general-purpose switching and amplification applications. It is characterized by its high collector current capability and is typically housed in a metal TO-18 or TO-105 package - Polarity: PNP (Silicon).
Collector-Emitter Voltage (
): -80V.
Collector-Base Voltage (
): -80V.
Continuous Collector Current (
): -1A.
Power Dissipation (
): 7W (at
for metal case types).
DC Current Gain (
): Typically around 300, with ranges varying based on collector current (e.g., 50–500 at 10mA).
Transition Frequency (
): Typically 50MHz to 100MHz minimum.
Operating Temperature Range:
to
.